NANOTECHNOLOGY FOR LIFE™
ASG is using the texturing of silicon using metal-enhanced etching to produce silicon nanowire arrays.
ASG owns the IP for practical solar cell device structures with this type of surface and also owns the IP for silicon nanowires used in Li-ion batteries, microfluidics, lab-on-chip, thermoelectrics, MEMS, and sensors. The unique capabilities of this technology are the controllability of the height, diameter, and density of the nanowires, uniformity over large surfaces, reproducibility, and production via large scale, low cost industrial processes (wet chemistry at atmospheric pressure).
ASG owns an extensive family of IP in the field of silicon nanowires and their application.
U.S. Patent No. 8,450,599 Nanostructured devices
U.S. Patent No. 10,269,995 Screen printing electrical contacts to nanostructured areas
U.S. Patent No. 9,768,331 Screen printing electrical contacts to nanowire areas
U.S. Patent No. 9,911,878 Metal-assisted etch combined with regularizing etch
U.S. Patent No. 8,143,143 Process for fabricating nanowire arrays
U.S. Patent No. 8,734,659 Process for structuring silicon
U.S. Patent No. 8,791,449 Nanostructured silicon for battery anodes
U.S. Patent No. 8,945,794 Process for forming silver films on silicon
U.S. Patent No. 8,852,981 Electrical contacts to nanostructured areas
U.S. Patent No. 9,099,583 Nanowire device with alumina passivation layer and methods of making same
U.S. Patent No. 9,136,410 Selective emitter nanowire array and methods of making same
U.S. Patent No. 9,202,868 Process for fabricating nanowire arrays
U.S. Patent No. 9,859,366 Process for fabricating silicon nanostructures
U.S. Patent No. 9,601,640 Electrical contacts to nanostructured areas
U.S. Patent No. 9,783,895 Double-etch nanowire process
U.S. Patent No. 9,449,855 Double-etch nanowire process
U.S. Patent Application No. 16/037,331 Nanostructured devices
U.S. Patent Application No. 14-758,091 Metal backed nanowire arrays